Our work characterising commercial SiC MOSFETs at deep-cryogenic temperatures is published in IOP: Materials for Quantum Technology!

Read our new paper characterising commercial SiC MOSFETs at deep-cryogenic temperatures.

We study device reproducibility and variability from 300 K down to 650 mK, highlighting key low-temperature effects including threshold voltage shifts, gate hysteresis and degraded subthreshold behaviour. These results help map the challenges and opportunities for using SiC transistor technology in future quantum devices and cryo-CMOS electronics.

Click here to read.