Our new preprint demonstrating radio-frequency reflectometry in silicon carbide large-area transistors is now available on arXiv!

Our new preprint demonstrating radio-frequency reflectometry in silicon carbide large-area transistors is now available on arXiv!

Read our new preprint on gate-based radio-frequency reflectometry in silicon carbide MOSFETs.

We study RF readout in commercial SiC MOSFETs and explore how their device structure and low-temperature behaviour influence reflectometry performance. This work identifies key considerations for developing SiC transistor technology for cryogenic readout, cryo-CMOS electronics, and future quantum-devices.

Click here to read.