Our work characterising commercial SiC MOSFETs at deep-cryogenic temperatures
Our work characterising commercial SiC MOSFETs at deep-cryogenic temperatures is published in IOP: Materials for Quantum Technology! Read our new paper characterising commercial SiC MOSFETs at deep-cryogenic temperatures. We study device reproducibility and variability from 300 K down to 650 mK, highlighting key low-temperature effects including threshold voltage shifts, gate hysteresis and degraded subthreshold […]
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